| PART |
Description |
Maker |
| 2N7002BKW |
60 V, 310 mA N-channel Trench MOSFET 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
NXP Semiconductors N.V.
|
| L12016-1630T-C L12005-1900H-C L12007-1294H-C L1201 |
Quantum Cascade Laser
|
Hamamatsu Corporation
|
| HL6724MG |
The HL6724MG is a 0.67 um band AlGaInP laser diode with a multi-quantum well (MQW) structure
From old datasheet system
The HL6724MG is a 0.67 ?m band AlGaInP laser diode with a multi-quantum well (MQW) structure.
|
HITACHI[Hitachi Semiconductor]
|
| EMC1438-2-AP-TR EMC1438-1-AP-TR |
1°C Multiple Temperature Sensor with Hardware Controlled Standby & Hottest of Multiple Zones
|
SMSC Corporation
|
| EQ-732L |
EQ-732L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| EQ-430L |
EQ-430L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| ZVN4525G ZVN4525GTA ZVN4525GTC |
PNP 30CM DIFF W/ADJ RoHS Compliant: Yes 310 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
250V N-CHANNEL ENHANCEMENT MODE MOSFET 310 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-channel MOSFET
|
Zetex Semiconductor PLC
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| LDM-0808-300M-91 |
CW Output Power: 300mW Typical 808 nm Emission Wavelength High-deeiciency Quantum Well Structure TO5 Package
|
Roithner LaserTechnik GmbH
|
| RO2053A-1 |
310.0 MHz SAW Resonator
|
RFM[RF Monolithics, Inc]
|
| SR310 |
310.00 MHz One-Port SAW Resonator
|
http://
|
| PAK-II |
310 Ivy Glen Court
|
Electronic Theatre Controls, Inc.
|
